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DC conductivity of twisted bilayer graphene: Angle-dependent transport properties and effects of disorder

机译:扭曲双层石墨烯的直流电导率:角度依赖性传输   疾病的特性和影响

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摘要

The in-plane DC conductivity of twisted bilayer graphene (TBLG) is calculatedusing an expansion of the real-space Kubo-Bastin conductivity in terms ofChebyshev polynomials. We investigate within a tight-binding (TB) approach thetransport properties as a function of rotation angle, applied perpendicularelectric field and vacancy disorder. We find that for high-angle twists, thetwo layers are effectively decoupled, and the minimum conductivity at the Diracpoint corresponds to double the value observed in monolayer graphene. Thisremains valid even in the presence of vacancies, hinting that chiral symmetryis still preserved. On the contrary, for low twist angles, the conductivity atthe Dirac point depends on the twist angle and is not protected in the presenceof disorder. Furthermore, for low angles and in the presence of an appliedelectric field, we find that the chiral boundary states emerging between AB andBA regions contribute to the DC conductivity, despite the appearance ofstrongly localized states in the AA regions. The results agree with recentconductivity experiments on twisted bilayer graphene.
机译:扭曲双层石墨烯(TBLG)的面内直流电导率是根据切比雪夫多项式使用实空间Kubo-Bastin电导率的展开来计算的。我们研究了紧束缚(TB)的方法中,运输特性随旋转角度,施加的垂直电场和空位紊乱而变化。我们发现,对于大角度扭曲,这两层有效地解耦,并且狄拉克点处的最小电导率对应于单层石墨烯中观察到的值的两倍。即使在存在空位的情况下,这种方法仍然有效,这表明手征对称性仍然得以保留。相反,对于低扭转角,狄拉克点处的电导率取决于扭转角,并且在存在紊乱的情况下不受保护。此外,对于低角度和存在外加电场的情况,我们发现,尽管在AA和BA区域中出现了强烈的局部化态,但在AB和BA区域之间出现的手性边界态却有助于直流电导率。结果与最近在扭曲双层石墨烯上的电导率实验吻合。

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